September 1, 2020

New Data: Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)

Scotts Valley, CA Sept 1, 2020 – To achieve low-resistant contacts for […]
March 15, 2020

Invited paper: Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge (237th ECS, May 2020)

Scotts Valley, CA March 15, 2020 – Differential Hall Effect Metrology (DHEM) as […]
October 16, 2019

ALP Awarded new SBIR grant for Research into 3D semiconductor materials

Scotts Valley, CA October 16, 2019 – ALP has been awarded a SBIR […]
July 31, 2019

Pitfalls of Relying solely on Bulk Electrical Properties – depth profiling provides deeper insight into semiconductor films

Scotts Valley, CA July 31, 2019 – Our recent white paper describes the pitfalls […]
May 7, 2019

FCMN: Near-surface Activation for n-doped Ge materials at <1nm resolution

At FCMN 2019 in Monterey California, Active Layer Parametrics presented near-surface activation […]
March 20, 2019

FCMN: Mobility & Activation depth profiles for Si:GaAs at <2nm resolution

At FCMN 2019 in Monterey California, Active Layer Parametrics will present mobility […]
January 7, 2019

Semiconductor Engineering publishes an article about ALP’s technology

Semiconductor Engineering, a premier publication on semiconductor process technology and business, published […]
September 14, 2018

ALP wins NSF SBIR Phase IIB award

ALP has been awarded a Phase II B grant to further develop […]
September 1, 2018

DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation

ALP’s DHEM was used to collect detailed data on the effect of […]
July 15, 2018

ALP’s DHEM technique used to measure mobility in epi-Ge p-well

DHEM data provided valuable data on mobility variations in epi-Ge p-well materials […]