New Data: Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)
September 1, 2020Differential Hall Effect Metrology (DHEM) featured on the cover of EDFA magazine – the renowned failure analysis resource
December 10, 2020ALP ECS PRiME Presentation on Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)
Scotts Valley, CA Oct 15, 2020 – ALP presented new data at the 2020 ECS PRiME Conference. In this paper, Differential Hall Effect Metrology (DHEM) as implemented in the ALPro™ tools, was used to study dopant activation with sub-nm resolution for SiP materials that were very highly doped (>1e21#/cm3 range). Data on activation in n-doped Ge is also presented.
You can see the presentation here: 2020 ECS PRiME presentation
Abstract of the paper can be found here: https://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/141222