Scotts Valley, CA September 28, 2025 

As the semiconductor industry pushes into the Ångström era, one challenge remains a persistent bottleneck: contact resistance.

Recent insights from Samsung, TSMC, and IMEC at VLSI 2025 and IITC 2025 highlight that as transistors scale below 1.4nm, interconnects—and critically, contact interfaces—are no longer secondary concerns.

They define performance, power efficiency, and scalability. Whether it’s GAA FETs, CFETs, or 2D TMD channels, high contact resistance undermines gains from advanced device architectures.

At ALP Inc., we believe the path forward starts with seeing the problem clearly. The ALPro DHEM (Differential Hall Effect Metrology) platform provides direct, sub-nm depth-resolved electrical insight into carrier concentration, mobility, and resistivity at contact interfaces and enabling teams to pinpoint exactly where and why resistance arises.

ALP’s tools are accelerating learning in industry:

• Optimize silicide/silicon interfaces with sub-nm resolution
• Evaluate contact doping efficiency in 3D structures
• Correlate process changes to electrical performance in hours, not weeks

ALPro tools redefine process feedback which gives materials and integration teams a powerful lens to optimize what was once invisible.

Please request the publication and more information by emailing info@alpinc.net

In a recent industry study, samples under two capping processes were compared: Process 1 retained activation while Process 2 caused about 50% loss in near-surface activation, a critical parameter for contact formation. Such insights provide a direct connection to process variations which affect device contact behavior and shrink process development feedback time from weeks (for CTLM or device measurements) to hours.