ALPro™ technology has the UNIQUE capability of measuring and depth profiling ALL of the critical electrical properties (mobility, sheet resistance, active carrier concentration) of semiconductor layers at high depth resolution (0.2 - 1nm), rapidly (<1hr).

Application areas include precise determination of doping levels in films to be used in transistor source-drain regions, and in-depth characterization of mobility for layers to be employed as channel materials in advanced device structures.

ALPro™ technology employs Differential Hall Effect Metrology (DHEM) technique which is carried out through three stages:

  • The electrically active thickness of the layer to be characterized is reduced by a tightly controlled amount at a selected measurement area on the wafer surface using a proprietary process.
  • Precise electrical measurements of the thinned down layer are carried out to obtain the sheet resistance and mobility values.
  • The electrical parameter depth profiles are calculated and plotted using the differential measurements taken by repeating the above two steps.