News – Active Layer Parametrics, Inc.

May 10, 2022

Differential Hall Effect Metrology (DHEM) vs SSRM with imec: New data published at FCMN 2022

Scotts Valley, CA May 10, 2022 New data from ALP will be […]

February 3, 2022

IEEE JEDS publication on sub-nm carrier profiling in highly doped Epi SiP using Differential Hall Effect Metrology (DHEM)

Scotts Valley, CA February 3, 2022 – ALP published a journal article on […]

July 13, 2021

Applied Materials uses Differential Hall Effect Metrology (DHEM) to understand activation and deactivation in ultra-highly doped n-type Epitaxy

Scotts Valley, CA July 13, 2021 – The Differential Hall Effect Metrology (DHEM) […]

June 25, 2021

IWJT 2021 publication on dopant activation in Si using Differential Hall Effect Metrology (DHEM)

Scotts Valley, CA June 25, 2021 – ALP recently published an interesting […]

June 5, 2021

Invited presentation: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)

Scotts Valley, CA June 5, 2021 – ALP was invited to present at […]

April 14, 2021

Invited paper: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)

Scotts Valley, CA April 14, 2021 – Differential Hall Effect Metrology (DHEM) as […]

December 10, 2020

Differential Hall Effect Metrology (DHEM) featured on the cover of EDFA magazine – the renowned failure analysis resource

Scotts Valley, CA Dec 10, 2020 – ALP was invited to publish […]

October 15, 2020

ALP ECS PRiME Presentation on Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)

Scotts Valley, CA Oct 15, 2020 – ALP presented new data at […]

September 1, 2020

New Data: Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)

Scotts Valley, CA Sept 1, 2020 – To achieve low-resistant contacts for […]

March 15, 2020

Invited paper: Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge (237th ECS, May 2020)

Scotts Valley, CA March 15, 2020 – Differential Hall Effect Metrology (DHEM) as […]