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May 10, 2022
Differential Hall Effect Metrology (DHEM) vs SSRM with imec: New data published at FCMN 2022
Scotts Valley, CA May 10, 2022 New data from ALP will be
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February 3, 2022
IEEE JEDS publication on sub-nm carrier profiling in highly doped Epi SiP using Differential Hall Effect Metrology (DHEM)
Scotts Valley, CA February 3, 2022 – ALP published a journal article on
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July 13, 2021
Applied Materials uses Differential Hall Effect Metrology (DHEM) to understand activation and deactivation in ultra-highly doped n-type Epitaxy
Scotts Valley, CA July 13, 2021 – The Differential Hall Effect Metrology (DHEM)
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June 25, 2021
IWJT 2021 publication on dopant activation in Si using Differential Hall Effect Metrology (DHEM)
Scotts Valley, CA June 25, 2021 – ALP recently published an interesting
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June 5, 2021
Invited presentation: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)
Scotts Valley, CA June 5, 2021 – ALP was invited to present at
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April 14, 2021
Invited paper: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)
Scotts Valley, CA April 14, 2021 – Differential Hall Effect Metrology (DHEM) as
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December 10, 2020
Differential Hall Effect Metrology (DHEM) featured on the cover of EDFA magazine – the renowned failure analysis resource
Scotts Valley, CA Dec 10, 2020 – ALP was invited to publish
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October 15, 2020
ALP ECS PRiME Presentation on Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)
Scotts Valley, CA Oct 15, 2020 – ALP presented new data at
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September 1, 2020
New Data: Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)
Scotts Valley, CA Sept 1, 2020 – To achieve low-resistant contacts for
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March 15, 2020
Invited paper: Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge (237th ECS, May 2020)
Scotts Valley, CA March 15, 2020 – Differential Hall Effect Metrology (DHEM) as
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