Scotts Valley, CA March 16, 2026

CEA-Leti, is driving Europe’s Angstrom-node technology initiatives. In their recent work on advanced FD-SOI nodes, they used ALP’s ALPro™ 100 system to optimize strained phosphorous-doped silicon (t-Si:P) layers for next-generation nMOS transistors.

The ALPro™ 100 delivered two critical results:

1. It validated their resistivity measurements, confirming the reliability of their entire analysis.
2. It provided depth-resolved dopant activation and diffusion data—insights impossible to get with any other technology.

This unique data was key to balancing the thermal budget for t-Si:P layers. CEA-Leti needed to find the sweet spot between:
>MAXIMIZING Dopant Activation → LOW RESISTIVITY,
>MINIMIZING Dopant Diffusion → SHARP JUNCTION and,
>PRESERVING Tensile Strain → HIGH MOBILITY.

ALP tools are the only tools on the market that provide this insight from directly measurements and close the R&D feedback loop with very low TAT.


By revealing exactly how annealing extends the conductive region, the ALPro™ 100 enabled CEA-Leti to reduce source/drain resistance without compromising junction integrity. This is a clear example of how our metrology enables the breakthroughs required for future semiconductor technologies.