Scotts Valley, CA February 10, 2025 

The semiconductor industry now has access to its only solution for direct measurement of active dopant profiles at sub-nanometer resolution. The ALPro™ platform, powered by our proprietary Differential Hall Effect Metrology (DHEM) system, delivers unmatched insights into device characteristics with precision that conventional methods simply cannot match.

This pioneering ALPro™ technology stands alone in delivering simultaneous measurements of active dopant concentration, carrier mobility, and resistivity depth profiles, all with sub-nanometer depth resolution – without inference or modeling.

Recent groundbreaking work at CEA-Leti demonstrated the system’s exceptional capabilities in characterizing advanced solid-phase epitaxial regrowth (SPER) processes. The ALPro™ platform provided critical measurements for optimizing their innovative adaptive energy density SPER strategy. The results were remarkable, achieving complete recrystallization verification and dopant activation rates beyond 90%. Through precise tracking of phosphorus concentration profiles, this advanced metrology solution enabled successful implementation in 28nm FD-SOI transistors. The work was published in Materials Science in Semiconductor Processing.

Please request the publication and more information by emailing info@alpinc.net

In an industry where precision defines success, ALPro™ provides the detailed insights needed to perfect semiconductor processes. Leading research institutions and manufacturers trust this innovative platform to advance their most challenging development projects.