Scotts Valley, CA October 24, 2024 

ALP’s Differential Hall Effect Metrology (DHEM) systems provides directly measured active dopant concentration, mobility and resistivity sub-nm depth profiles (www.alpinc.net). This data has proved to be valuable to process groups to connect process and material variations to variations in electrical behavior of device stacks.

ALP Inc. recently published an important review article in the Journal METROLOGY titled “Differential Hall Effect Metrology for Electrical Characterization of Advanced Semiconductor Layers“. This article reviews the development history of this important technique and present data from recent characterization work carried out on Si, Ge and SiGe layers. The paper contains important data-sets that demonstrate accuracy, reliability and verifiability of the DHEM data produced by ALP tools.

DHEM is the only technique that directly measures active dopant concentration, mobility and resistivity depth profiles through semiconductor layers at sub-nm depth resolution.

Please request the publication and more information by emailing info@alpinc.net