Scotts Valley, CA March 30, 2023
ALP published a detailed paper on how Differential Hall Effect Metrology (DHEM) can be verified recently in MRS Advances (https://link.springer.com/article/10.1557/s43580-022-00445-6).
DHEM electrical profile data provides complete information on carriers, resistivity and mobility at any depth within an activated layer at very high resolutions. Traditional sheet resistance or Hall mobility measurement apparatus can only provide a single, bulk point of measurement for the entire layer, and are the main pieces of data used to evaluate the electrical properties of activated layers.
Using DHEM data on ultrashallow junctions (<10-15nm), the authors demonstrate that you can calculate the sheet resistance and bulk Hall mobility data from the DHEM depth profiles. This calculated sheet resistance and Hall mobility value will always be equal to measured bulk values of sheet resistance and Hall mobility. This allows customers to cross-check and verify that DHEM profile data is complete and correct using different tools that use different methods than ALPro systems.
It should be noted that most current profiling data (including Secondary Ion Mass Spectrometry (SIMS), Scanning Spreading Resistance Microscopy (SSRM), Spreading Resistance Profiling (SRP), etc. ) produce datasets that cannot be independently validated in this manner.
Additionally, the ALPro 100 DHEM system provides sub-nm depth resolution which allows for complete analysis and process optimization of semiconductor materials needed for next generation CMOS devices.
ALPro 100 can also be used to evaluate many semiconductor materials including Si, SiGe, Ge, and power/RF materials and is the most advanced DHEM system on the market.
Please request the paper by emailing firstname.lastname@example.org