Scotts Valley, CA September 5, 2022
ALP’s Differential Hall Effect Metrology (DHEM) was used to accurately and effectively evaluate the carrier concentration, mobility, and resistivity depth profiles at nano-scale resolution for BF2 and P implanted poly-Si layers after RTA (750–950°C) and CO2 laser (115–135W) annealing.
ALProTM technology has the capability of providing carrier concentration and mobility depth profiles through thin layers at sub-nm resolution. This strength was used in conjunction with SIMS and TEM to fully evaluate, in great detail, the electrical properties of ultra-shallow junctions and correlate these electrical properties to process conditions.
The ALPro™ 100 DHEM system provides:
1. Sub-nm depth resolution which captures even interface-layer (IL) data.
2. Quantitative and verifiable electrical data collected using Van der Pauw/Hall technique.
3. Data for many semiconductor materials including Si, SiGe, Ge, and power/RF materials.
This enables complete analysis and process optimization of semiconductor materials needed for current and next generation CMOS devices.
ALPro™ 100 is the most advanced DHEM system on the market, brought to you by the leaders in DHEM metrology.
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