Invited paper: Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge (237th ECS, May 2020)
March 15, 2020ALP ECS PRiME Presentation on Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)
October 15, 2020New Data: Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)
Scotts Valley, CA Sept 1, 2020 – To achieve low-resistant contacts for new gen devices industry is looking at ways to increase the electrical performance of doped semiconductor films. One way is to increase the dopant concentration to never before seen levels in the >1e21#/cm3 range.
In this paper, Differential Hall Effect Metrology (DHEM) as implemented in the ALPro™ tools, was used to study dopant activation with sub-nm resolution for SiP materials that were very highly doped (>1e21#/cm3 range). Data on activation in n-doped Ge is also presented.
Abstract of the paper can be found here: https://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/141222