Scotts Valley, CA Sept 1, 2020 – To achieve low-resistant contacts for new gen devices industry is looking at ways to increase the electrical performance of doped semiconductor films. One way is to increase the dopant concentration to never before seen levels in the >1e21#/cm3 range.
In this paper, Differential Hall Effect Metrology (DHEM) as implemented in the ALPro™ tools, was used to study dopant activation with sub-nm resolution for SiP materials that were very highly doped (>1e21#/cm3 range). Data on activation in n-doped Ge is also presented.
Abstract of the paper can be found here: https://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/141222