ALP Awarded new SBIR grant for Research into 3D semiconductor materials
October 16, 2019
New Data: Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)
September 1, 2020
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Invited paper: Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge (237th ECS, May 2020)

Scotts Valley, CA March 15, 2020 Differential Hall Effect Metrology (DHEM) as implemented in the ALPro™ tools, was used to study dopant activation with sub-nm resolution on n-type Ge epi layers grown on Si substrates. An important process problem was uncovered using this data, which was eventually traced back to the capping layers used in the process.

Abstract of the paper can be found here:

Please email us at for a pre-print version.