Scotts Valley, CA October 16, 2019 – ALP has been awarded a SBIR Phase I grant by National Science Foundation (NSF) to develop a novel technology, which will provide electrical property depth profiles through three dimensional (3D) semiconductor structures (https://www.nsf.gov/awardsearch/showAward?AWD_ID=1938643). ALP has previously completed Phase I and Phase II SBIR projects that resulted in the development of Differential Hall Effect Metrology (DHEM) technique, and deployment of DHEM technology into the semiconductor industry.

This new work will focus on development of technology to profile 3D materials, like FIN devices, and provide a crucial link between process changes and the electrical property of the 3D material.