FCMN: Near-surface Activation for n-doped Ge materials at <1nm resolution
May 7, 2019ALP Awarded new SBIR grant for Research into 3D semiconductor materials
October 16, 2019Pitfalls of Relying solely on Bulk Electrical Properties – depth profiling provides deeper insight into semiconductor films
Scotts Valley, CA July 31, 2019 – Our recent white paper describes the pitfalls in using standard bulk film measurement data for doping process development, and how Differential Hall Effect Metrology (DHEM) depth profiling of electrical properties solves this problem. Discussion includes:
- Real-world data with measured sheet and Hall bulk mobility values,
- Comparison of SIMS dopant profiles with DHEM carrier concentration profiles.
Link to whitepaper.