FCMN: Near-surface Activation for n-doped Ge materials at

FCMN: Mobility & Activation depth profiles for Si:GaAs at <2nm resolution

March 20, 2019

Pitfalls of Relying solely on Bulk Electrical Properties – depth profiling provides deeper insight into semiconductor films

July 31, 2019

FCMN: Near-surface Activation for n-doped Ge materials at <1nm resolution

At FCMN 2019 in Monterey California, Active Layer Parametrics presented near-surface activation depth profiles for Phos:Ge and co-doped Sb & Phos:Ge with a depth resolutions of <1nm. This project was a collaboration with Stanford Univeristy and EAG Laboratories. Data was collected using the ALPro-50 DHEM profiler. Data provides direct activation profiles which complements the chemical compositional profiles captured by SIMS.

Link: http://www2.avs.org/conferences/FCMN/

ALPro-50 profiles provide a direct measurement of activation and mobility as a function of depth at sub-nm resolution for most important electronic materials. — Near-surface <1nm resolution activation profiles for n-doped Ge. ALPro profiles provide electrical information whereas SIMS provides chemical composition information.

FCMN: Mobility & Activation depth profiles for Si:GaAs at <2nm resolution

Pitfalls of Relying solely on Bulk Electrical Properties – depth profiling provides deeper insight into semiconductor films

FCMN: Mobility & Activation depth profiles for Si:GaAs at <2nm resolution

Pitfalls of Relying solely on Bulk Electrical Properties – depth profiling provides deeper insight into semiconductor films

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