FCMN: Near-surface Activation for n-doped Ge materials at <1nm resolution
At FCMN 2019 in Monterey California, Active Layer Parametrics presented near-surface activation depth profiles for Phos:Ge and co-doped Sb & Phos:Ge with a depth resolutions of <1nm. This project was a collaboration with Stanford Univeristy and EAG Laboratories. Data was collected using the ALPro-50 DHEM profiler. Data provides direct activation profiles which complements the chemical compositional profiles captured by SIMS.