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Invited presentation: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)
June 5, 2021
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Invited paper: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)

Scotts Valley, CA April 14, 2021 – Differential Hall Effect Metrology (DHEM) as implemented in the ALPro™ tools was recently used by ALP collaborators at Imec and Taiwan Semiconductor Research Institute (TSRI). This work is summarized in a new invited paper titled “Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM)”, and will be presented at the 239th ECS Meeting (May 30 to June 3 2021).

This new data was developed jointly with with researchers at Imec working on pSiGe and with researchers working on annealing technologies at TSRI.

Abstract of the paper can be found here: https://ecs.confex.com/ecs/239/meetingapp.cgi/Paper/147952

Please email us at info@alpinc.net for a pre-print version.