Invited paper: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)
April 14, 2021IWJT 2021 publication on dopant activation in Si using Differential Hall Effect Metrology (DHEM)
June 25, 2021Invited presentation: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)
Scotts Valley, CA June 5, 2021 – ALP was invited to present at the 239th ECS Meeting. The presentation covered the data measured by the Differential Hall Effect Metrology (DHEM) as implemented in the ALPro™ tools, and the latest data measured on pSiGe and shallow implanted Si samples. This new data was developed jointly with with researchers at Imec (www.imec.be) and the Taiwan Semiconductor Research Institute (TSRI, www.tsri.org.tw/en/).
The presentation can be viewed here: 239th ECS Invited presentation
Abstract of the paper can be found here: https://ecs.confex.com/ecs/239/meetingapp.cgi/Paper/147952
Please email us at info@alpinc.net for a pre-print version.