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IEEE JEDS publication on sub-nm carrier profiling in highly doped Epi SiP using Differential Hall Effect Metrology (DHEM)

Scotts Valley, CA February 3, 2022 – ALP published a journal article on highly doped SiP materials in the prestigious IEEE Journal of the Electron Devices Society(JEDS) proceedings. Considerable effort is being directed towards reducing source/drain (S/D) contact resistivity to a level below 1E-9 ohm-cm2. To that end, very high-activation in doped material is needed throughout the films, and especially in the near-surface. DHEM is the only technique that can deliver the needed data at sub-nm resolutions.

ALP’s Differential Hall Effect Metrology (DHEM) provides sub-nm resolution resistivity, mobility and, carrier profiles of semiconductors. In addition to details on near-surface resistivity and carrier profiles, this paper discussed the impact of very high doping levels on  carrier mobility profiles in this material system. 

This work shows that electrical properties of films forming ultra-shallow junctions can be studied in detail and correlated with process parameters using DHEM data obtained at sub-nm depth resolution.

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