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Applied Materials uses Differential Hall Effect Metrology (DHEM) to understand activation and deactivation in ultra-highly doped n-type Epitaxy

Scotts Valley, CA July 13, 2021 – The Differential Hall Effect Metrology (DHEM) technique has been used to understand activation and deactivation in ultra-highly (>1e21#/cm3) doped n-type Epitaxy materials by leading epi tool supplier Applied Materials (appliedmaterials.com). DHEM is the only technique that could provide direct data profiles that indicated degradation of activation in the near-surface.

DHEM provides sub-nm resolution resistivity, mobility and, carrier concentration profiles of semiconductors. This complete electrical data-set is needed to fully understand the impact of process changes on the electrical behavior of semiconductor materials like Si, Ge, SiGe and, III-Vs. This data can be used to troubleshoot and optimize semiconductor processes, and develop new processes.

This data was also published at the 2020 ECS PRiME Conference as an invited paper.

The article can be found here: AMAT uses DHEM