IEEE JEDS publication on sub-nm carrier profiling in highly doped Epi SiP using Differential Hall Effect Metrology (DHEM)
February 3, 2022Spreading Resistance Profiling (SRP) vs Differential Hall Effect Metrology (DHEM) with TSRI: New data published at FCMN 2022
June 29, 2022Differential Hall Effect Metrology (DHEM) vs SSRM with imec: New data published at FCMN 2022
Scotts Valley, CA May 10, 2022
New data from ALP will be published at the upcoming 2022 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN 2022).
ALP’s Differential Hall Effect Metrology (DHEM) provides sub-nm resolution resistivity, mobility and, carrier depth profiles of semiconductors. In our publication with imec, we compare ALPro(TM) 100 DHEM profiles with Scanning Spreading Resistance Microscopy (SSRM) data.
SSRM provides spreading resistance profile data which is converted to carrier profiles via calibration. On the other hand, DHEM measures resistivity, mobility and carrier profiles are collected using Van der Pauw/Hall Effect measurements. So it is not surprising that ALPro 100 captures the electrical impact of process changes on semiconductors precisely and completely.
ALPro 100 can also be used to evaluate many semiconductor materials including Si, SiGe, Ge, and power/RF materials and is the most advanced DHEM system on the market.
Additional studies can be found here: alpinc.net/news
Please let me know if you would like a pre-print of the above FCMN publication.