July 31, 2019Pitfalls of Relying solely on Bulk Electrical Properties – depth profiling provides deeper insight into semiconductor filmsScotts Valley, CA July 31, 2019 – Our recent white paper describes the pitfalls […]
May 7, 2019FCMN: Near-surface Activation for n-doped Ge materials at <1nm resolutionAt FCMN 2019 in Monterey California, Active Layer Parametrics presented near-surface activation […]
March 20, 2019FCMN: Mobility & Activation depth profiles for Si:GaAs at <2nm resolutionAt FCMN 2019 in Monterey California, Active Layer Parametrics will present mobility […]
January 7, 2019Semiconductor Engineering publishes an article about ALP’s technologySemiconductor Engineering, a premier publication on semiconductor process technology and business, published […]
September 14, 2018ALP wins NSF SBIR Phase IIB awardALP has been awarded a Phase II B grant to further develop […]
September 1, 2018DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantationALP’s DHEM was used to collect detailed data on the effect of […]
July 15, 2018ALP’s DHEM technique used to measure mobility in epi-Ge p-wellDHEM data provided valuable data on mobility variations in epi-Ge p-well materials […]
July 10, 2018ALP selected to present at Semicon WEST 2018… ALP selected to present at Semicon WEST 2018 “Smart Manufacturing Meet […]
July 1, 2018ALP invited to present at Northern California Chapter AVS (NCCAVS) Junction Technology Users Group Meeting ALP invited to present at Northern California Chapter AVS (NCCAVS) Junction […]
May 1, 2017ALP is admitted as a portfolio company of Silicon Catalyst ALP is admitted as a portfolio company of Silicon Catalyst, a […]