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July 31, 2019

Pitfalls of Relying solely on Bulk Electrical Properties – depth profiling provides deeper insight into semiconductor films

Scotts Valley, CA July 31, 2019 – Our recent white paper describes the pitfalls […]
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May 7, 2019

FCMN: Near-surface Activation for n-doped Ge materials at <1nm resolution

At FCMN 2019 in Monterey California, Active Layer Parametrics presented near-surface activation […]
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March 20, 2019

FCMN: Mobility & Activation depth profiles for Si:GaAs at <2nm resolution

At FCMN 2019 in Monterey California, Active Layer Parametrics will present mobility […]
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January 7, 2019

Semiconductor Engineering publishes an article about ALP’s technology

Semiconductor Engineering, a premier publication on semiconductor process technology and business, published […]
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September 14, 2018

ALP wins NSF SBIR Phase IIB award

ALP has been awarded a Phase II B grant to further develop […]
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September 1, 2018

DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation

ALP’s DHEM was used to collect detailed data on the effect of […]
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July 15, 2018

ALP’s DHEM technique used to measure mobility in epi-Ge p-well

DHEM data provided valuable data on mobility variations in epi-Ge p-well materials […]
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July 10, 2018

ALP selected to present at Semicon WEST 2018…

  ALP selected to present at Semicon WEST 2018 “Smart Manufacturing Meet […]
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July 1, 2018

ALP invited to present at Northern California Chapter AVS (NCCAVS) Junction Technology Users Group Meeting

  ALP invited to present at Northern California Chapter AVS (NCCAVS) Junction […]
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May 1, 2017

ALP is admitted as a portfolio company of Silicon Catalyst

  ALP is admitted as a portfolio company of Silicon Catalyst, a […]
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Active Layer Parametrics, Inc. (ALP)

5500 Butler Lane,
Scotts Valley, CA 95066

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