ALP’s DHEM technique used to measure mobility in epi-Ge p-well

ALP selected to present at Semicon WEST 2018…

July 10, 2018

DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation

September 1, 2018

ALP’s DHEM technique used to measure mobility in epi-Ge p-well

DHEM data provided valuable data on mobility variations in epi-Ge p-well materials implanted with Si and Sn. Laser annealing was used to activate the active layers.

Publication: http://ecst.ecsdl.org/content/86/7/357.abstract

Draft: https://www.researchgate.net/publication/327804121_Boosting_Ge-Epi_P-Well_Mobility_Crystal_Quality_with_Si_or_Sn_Implantation_and_Melt_Annealing

ALP selected to present at Semicon WEST 2018…

DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation

ALP’s DHEM technique used to measure mobility in epi-Ge p-well

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