DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation

ALP’s DHEM technique used to measure mobility in epi-Ge p-well

July 15, 2018

ALP wins NSF SBIR Phase IIB award

September 14, 2018

DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation

ALP’s DHEM was used to collect detailed data on the effect of Sn, Si and cluster-C implantations into both P-well and N-well doped regions of 100nm Ge-epilayer on Si wafers after RTA annealing.

Abstract: https://www.iit2018.org/content/dam/iisb/iit2018/documents/abstbook_iit2018.pdf

Draft: https://www.researchgate.net/publication/329771419_Boosting_Ge-epi_N-well_Mobility_with_Sn_Implantation_and_P-well_Mobility_with_Cluster-C_Implantation

ALP’s DHEM technique used to measure mobility in epi-Ge p-well

ALP wins NSF SBIR Phase IIB award

DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation

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