ALP’s DHEM technique used to measure mobility in epi-Ge p-well
July 15, 2018ALP wins NSF SBIR Phase IIB award
September 14, 2018DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation
ALP’s DHEM was used to collect detailed data on the effect of Sn, Si and cluster-C implantations into both P-well and N-well doped regions of 100nm Ge-epilayer on Si wafers after RTA annealing.
Abstract: https://www.iit2018.org/content/dam/iisb/iit2018/documents/abstbook_iit2018.pdf