September 18, 2022

241 ECS: In-depth comparison of Scanning Spreading Resistance Microscopy (SSRM) with Differential Hall Effect Metrology (DHEM) on highly doped Silicon epi materials with imec.

Scotts Valley, CA Sept 18, 2022  The 241 ECS meeting published interesting […]
August 2, 2022

Journal of Material Science: Differential Hall Effect Metrology (DHEM) used to analyze BF2 and P doped ultra-shallow polySi materials with TSRI.

Scotts Valley, CA August 18, 2022  ALP’s Differential Hall Effect Metrology (DHEM) was used […]
June 10, 2022

Differential Hall Effect Metrology (DHEM) of UV-laser annealed for 3D-stacked CMOS with SCREEN/LASSE

Scotts Valley, CA June 29, 2022  SCREEN/LASSE recently published new ALPro(TM) 100 […]
May 31, 2022

Spreading Resistance Profiling (SRP) vs Differential Hall Effect Metrology (DHEM) with TSRI: New data published at FCMN 2022

Scotts Valley, CA May 31, 2022  The Taiwan Semiconductor Research Institute (TSRI) and […]
May 10, 2022

Differential Hall Effect Metrology (DHEM) vs SSRM with imec: New data published at FCMN 2022

Scotts Valley, CA May 10, 2022  New data from ALP will be […]
February 3, 2022

IEEE JEDS publication on sub-nm carrier profiling in highly doped Epi SiP using Differential Hall Effect Metrology (DHEM)

Scotts Valley, CA February 3, 2022 – ALP published a journal article on […]
July 13, 2021

Applied Materials uses Differential Hall Effect Metrology (DHEM) to understand activation and deactivation in ultra-highly doped n-type Epitaxy

Scotts Valley, CA July 13, 2021 – The Differential Hall Effect Metrology (DHEM) […]
June 25, 2021

IWJT 2021 publication on dopant activation in Si using Differential Hall Effect Metrology (DHEM)

Scotts Valley, CA June 25, 2021 – ALP recently published an interesting […]
June 5, 2021

Invited presentation: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)

Scotts Valley, CA June 5, 2021 – ALP was invited to present at […]
April 14, 2021

Invited paper: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)

Scotts Valley, CA April 14, 2021 – Differential Hall Effect Metrology (DHEM) as […]