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December 10, 2020
Differential Hall Effect Metrology (DHEM) featured on the cover of EDFA magazine – the renowned failure analysis resource
Scotts Valley, CA Dec 10, 2020 – ALP was invited to publish
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October 15, 2020
ALP ECS PRiME Presentation on Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)
Scotts Valley, CA Oct 15, 2020 – ALP presented new data at
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September 1, 2020
New Data: Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)
Scotts Valley, CA Sept 1, 2020 – To achieve low-resistant contacts for
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March 15, 2020
Invited paper: Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge (237th ECS, May 2020)
Scotts Valley, CA March 15, 2020 – Differential Hall Effect Metrology (DHEM) as
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October 16, 2019
ALP Awarded new SBIR grant for Research into 3D semiconductor materials
Scotts Valley, CA October 16, 2019 – ALP has been awarded a SBIR
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July 31, 2019
Pitfalls of Relying solely on Bulk Electrical Properties – depth profiling provides deeper insight into semiconductor films
Scotts Valley, CA July 31, 2019 – Our recent white paper describes the pitfalls
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May 7, 2019
FCMN: Near-surface Activation for n-doped Ge materials at <1nm resolution
At FCMN 2019 in Monterey California, Active Layer Parametrics presented near-surface activation
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March 20, 2019
FCMN: Mobility & Activation depth profiles for Si:GaAs at <2nm resolution
At FCMN 2019 in Monterey California, Active Layer Parametrics will present mobility
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January 7, 2019
Semiconductor Engineering publishes an article about ALP’s technology
Semiconductor Engineering, a premier publication on semiconductor process technology and business, published
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September 14, 2018
ALP wins NSF SBIR Phase IIB award
ALP has been awarded a Phase II B grant to further develop
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