News – Page 2 – Active Layer Parametrics, Inc.

June 25, 2021

IWJT 2021 publication on dopant activation in Si using Differential Hall Effect Metrology (DHEM)

Scotts Valley, CA June 25, 2021 – ALP recently published an interesting […]

June 5, 2021

Invited presentation: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)

Scotts Valley, CA June 5, 2021 – ALP was invited to present at […]

April 14, 2021

Invited paper: Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) (239th ECS, May 2021)

Scotts Valley, CA April 14, 2021 – Differential Hall Effect Metrology (DHEM) as […]

December 10, 2020

Differential Hall Effect Metrology (DHEM) featured on the cover of EDFA magazine – the renowned failure analysis resource

Scotts Valley, CA Dec 10, 2020 – ALP was invited to publish […]

October 15, 2020

ALP ECS PRiME Presentation on Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)

Scotts Valley, CA Oct 15, 2020 – ALP presented new data at […]

September 1, 2020

New Data: Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM) (ECS PRiME, Oct 2020)

Scotts Valley, CA Sept 1, 2020 – To achieve low-resistant contacts for […]

March 15, 2020

Invited paper: Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge (237th ECS, May 2020)

Scotts Valley, CA March 15, 2020 – Differential Hall Effect Metrology (DHEM) as […]

October 16, 2019

ALP Awarded new SBIR grant for Research into 3D semiconductor materials

Scotts Valley, CA October 16, 2019 – ALP has been awarded a SBIR […]

July 31, 2019

Pitfalls of Relying solely on Bulk Electrical Properties – depth profiling provides deeper insight into semiconductor films

Scotts Valley, CA July 31, 2019 – Our recent white paper describes the pitfalls […]

May 7, 2019

FCMN: Near-surface Activation for n-doped Ge materials at <1nm resolution

At FCMN 2019 in Monterey California, Active Layer Parametrics presented near-surface activation […]