alpinc-logo_02alpinc-logo_02alpinc-logo_02alpinc-logo_02
  • Home
  • Technology
  • Products
  • News
  • Contact Us
✕
DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation
September 1, 2018
Semiconductor Engineering publishes an article about ALP’s technology
January 7, 2019
DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation
September 1, 2018
Semiconductor Engineering publishes an article about ALP’s technology
January 7, 2019
Show all

ALP wins NSF SBIR Phase IIB award

ALP has been awarded a Phase II B grant to further develop capabilities of DHEM. Phase IIB is only awarded to Companies that are successful in commercializing the development work done in Phase I & II.

Link: https://www.sbir.gov/sbc/active-layer-parametrics-inc

Related posts

March 17, 2026

CEA-Leti Advances FD-SOI with ALPro™ 100 Data


Read more
September 28, 2025

ALP publishes white-paper on contact resistance


Read more
February 11, 2025

CEA-Leti relies on ALP technology to quantify activation in novel laser process


Read more

Active Layer Parametrics, Inc. (ALP)

5500 Butler Lane,
Scotts Valley, CA 95066

Contact Us

E-mail us »

Search

✕
Copyright © Active Layer Parametrics, Inc. (ALP). All Rights Reserved. Designed by Meltem Technology, Inc.