ALP selected to present at Semicon WEST 2018…
July 10, 2018DHEM shows P and N-well epi-Ge mobility can be increased using Sn, Si and cluster C implantation
September 1, 2018DHEM data provided valuable data on mobility variations in epi-Ge p-well materials implanted with Si and Sn. Laser annealing was used to activate the active layers.
Publication: http://ecst.ecsdl.org/content/86/7/357.abstract