ALP is awarded a SBIR Phase I grant by National Science Foundation

ALP wins NSF SBIR Phase II

July 1, 2016

ALP is awarded a SBIR Phase I grant by National Science Foundation

ALP is awarded a SBIR Phase I grant by National Science Foundation (NSF) to develop a novel metrology technology that provides atomic-level resolution in depth-profiling electrical properties of semiconductor layers.

https://www.nsf.gov/awardsearch/showAward?AWD_ID=1519796

ALP wins NSF SBIR Phase II

ALP is awarded a SBIR Phase I grant by National Science Foundation

Related posts

241 ECS: In-depth comparison of Scanning Spreading Resistance Microscopy (SSRM) with Differential Hall Effect Metrology (DHEM) on highly doped Silicon epi materials with imec.

Journal of Material Science: Differential Hall Effect Metrology (DHEM) used to analyze BF2 and P doped ultra-shallow polySi materials with TSRI.

Differential Hall Effect Metrology (DHEM) of UV-laser annealed for 3D-stacked CMOS with SCREEN/LASSE