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Journal of Material Science: Differential Hall Effect Metrology (DHEM) used to analyze BF2 and P doped ultra-shallow polySi materials with TSRI.

Scotts Valley, CA August 18, 2022 

ALP’s Differential Hall Effect Metrology (DHEM) was used to accurately and  effectively evaluate the carrier concentration, mobility, and resistivity depth profiles at nano-scale resolution for BF2 and P implanted poly-Si layers after RTA (750–950°C) and CO2 laser (115–135W) annealing.

ALProTM technology has the capability of providing carrier concentration and mobility depth profiles through thin layers at sub-nm resolution. This strength was used in conjunction with SIMS and TEM to fully evaluate, in great detail, the electrical properties of ultra-shallow junctions and correlate these electrical properties to process conditions.

The Taiwan Semiconductor Research Institute (TSRI) & NYCU published this work in the Journal of Material Science.

The ALPro™ 100 DHEM system provides:
1. Sub-nm depth resolution which captures even interface-layer (IL) data.
2. Quantitative and verifiable electrical data collected using Van der Pauw/Hall technique.
3. Data for many semiconductor materials including Si, SiGe, Ge, and power/RF materials.

This enables complete analysis and process optimization of semiconductor materials needed for current and next generation CMOS devices.

ALPro™ 100 is the most advanced DHEM system on the market, brought to you by the leaders in DHEM metrology.

Please request the paper by emailing ajoshi@alpinc.net