ALPro Technology has the UNIQUE capability of measuring and profiling ALL of the critical electrical properties (mobility, sheet resistance, active carrier concentration) of semiconductor layers at high resolution (0.2 - 1nm), rapidly (<1hr).
Application areas include precise characterization of source-drain regions and new materials (SiGe, Ge, III-V) used in advanced device structures.
ALPro measurement process is carried out through three stages:
- The effective thickness of the layer to be characterized is reduced by a tightly controlled amount at a selected measurement area on the wafer surface.
- Precise electrical measurements of the thinned down layer are carried out to obtain the sheet resistance and mobility values.
- The electrical parameter profiles are calculated and plotted using the differential measurements taken by repeating steps 1 and 2 until a desired depth into the layer is reached.