ALPro Technology has the UNIQUE capability of measuring and depth profiling ALL of the critical electrical properties (mobility, sheet resistance, active carrier concentration) of semiconductor layers at high depth resolution (0.2 - 1nm), rapidly (<1hr).
Application areas include precise determination of doping levels in films to be used in transistor source-drain regions, and in-depth characterization of mobility for layers (Si, Si-Ge, Ge, III-V) to be employed as channel materials in advanced device structures.
ALPro measurement process is carried out through three stages:
- The effective thickness of the layer to be characterized is reduced by a tightly controlled amount at a selected measurement area on the wafer surface using a proprietary process.
- Precise electrical measurements of the thinned down layer are carried out to obtain the sheet resistance and mobility values.
- The electrical parameter depth profiles are calculated and plotted using the differential measurements taken by repeating the above two steps.